In a reverse-biased $pn$-junction diode,the depletion layer width:

Which of the following options is correct for the $P-N$ junction diode shown in the figure?

What is the cause of the formation of the depletion layer in a $P-N$ junction?

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

In a semiconductor $p-n$ diode, the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$, respectively. Which one of the following statements is true?

The $V-I$ characteristic of a silicon diode is shown in the Figure. Calculate the resistance of the diode at $(a) \; I_{D} = 15 \, mA$ and $(b) \; V_{D} = -10 \, V$.