In the figure,the potential difference between $A$ and $B$ is......$V$.

In the following circuits,which one of the diodes is reverse biased?

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

In the following circuit,the equivalent resistance between $A$ and $B$ is

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?