$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

If the internal resistance of the cell is negligible,then the current flowing through the circuit is: (in $A$)

In a semiconductor diode,the reverse biased current is due to the drift of free electrons and holes caused by:

If a $p-n$ junction diode is forward biased,then:

The band gap in a semiconductor is $0.6 eV$. The maximum wavelength of electromagnetic radiation which can create a hole-electron pair in this semiconductor is equal to [Use $hc = 1242 eV-nm$]. (in $nm$)