Pure Si at 500, K has equal number of electro | vedclass

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(A) $p$-type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like indium $(In)$.Given,intrinsic carrier concentration $

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$p$-type having electron concentration $n_e = 5 	imes 10^9 \, m^{-3}$

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(A) $p$-type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like indium $(In)$.Given,intrinsic carrier concentration $n_i = 1.5 	imes 10^{16} \, m^{-3}$ and hole concentration $n_h = 4.5 	imes 10^{22} \, m^{-3}$.Since $n_h > n_i$,the semiconductor is $p$-type.Using the mass action law,$n_e \cdot n_h = n_i^2$.Therefore,$n_e = \frac{n_i^2}{n_h} = \frac{(1.5 	imes 10^{16})^2}{4.5 	imes 10^{22}} = \frac{2.25 	imes 10^{32}}{4.5 	imes 10^{22}} = 0.5 	imes 10^{10} = 5 	imes 10^9 \, m^{-3}$.

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:

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