Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

  • A
    $5 \times 10^9 \ m^{-3}$
  • B
    $2.25 \times 10^{10} \ m^{-3}$
  • C
    $3 \times 10^{12} \ m^{-3}$
  • D
    $9 \times 10^6 \ m^{-3}$

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