The impurity atom added to germanium to make it $N-$type semiconductor is

  • A
    Arsenic
  • B
    Iridium
  • C
    Aluminium
  • D
    Iodine

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If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

Pure Silicon crystal at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. Doping by indium increases $n_h = 4.5 \times 10^{22} \ m^{-3}$. The $n_e$ in the doped silicon is:

In an intrinsic semiconductor at room temperature, the number of electrons and holes are:

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