To obtain $P$-type $Si$ semiconductor,we need to dope pure $Si$ with

If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

$A$ pure semiconductor crystal has $5 \times 10^{22}$ atoms per $cm^3$. It is doped by $1$ ppm concentration of pentavalent element. The number of holes in the doped semiconductor is (given that $n_i = 1.5 \times 10^{10} cm^{-3}$):

The typical ionisation energy of a donor in silicon is.....$eV$

When arsenic is added as an impurity to silicon,the resulting material is

$A$ pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped with $1 \, ppm$ concentration of pentavalent $As$. The number of holes is (Take $n_i = 1.5 \times 10^{16} \, m^{-3}$)