When arsenic is added as an impurity to silicon,the resulting material is

$A$ semiconductor doped with a donor impurity is

What is the relation between the number density of holes $(n_h)$ and free electrons $(n_e)$ in an intrinsic semiconductor at room temperature?

The $n-$type semiconductors are obtained when germanium is doped with

When an $n$-type semiconductor is heated,

The Bohr radius of the fifth electron of phosphorus (atomic number $Z = 15$) acting as a dopant in silicon (relative dielectric constant $\varepsilon_r = 12$) is ....... $\mathring{A}$.