When a $p-n$ junction diode is forward biased,

  • A
    the depletion region is reduced and barrier height is increased.
  • B
    the depletion region is widened and barrier height is reduced.
  • C
    both the depletion region and barrier height are increased.
  • D
    both the depletion region and barrier height are reduced.

Explore More

Similar Questions

In a $P-N$ junction under reverse bias,the depletion layer contains .......

To make a $PN$ junction conducting,

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

In the given circuit,two ideal diodes are connected in parallel in opposite directions. What is the current $I$ flowing in the circuit (in $A$)?

For the given circuit of a $PN-$ junction diode,which of the following statements is correct?

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo