When a p-n junction diode is forward biased, | vedclass

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Question

(D) In forward biasing,the positive terminal of the battery is connected to the $p$-side and the negative terminal to the $n$-side of the $p-n$ juncti

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both the depletion region and barrier height are reduced.

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(D) In forward biasing,the positive terminal of the battery is connected to the $p$-side and the negative terminal to the $n$-side of the $p-n$ junction diode.This external electric field opposes the internal electric field of the junction.As a result,the width of the depletion region $(x)$ decreases and the potential barrier height $(V_B)$ also decreases.Therefore,the correct option is $D$.

When a $p-n$ junction diode is forward biased,

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