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(C) $1$. The resistance of intrinsic semiconductors decreases with an increase in temperature because more charge carriers are generated as thermal en

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The majority carriers in $n$-type semiconductors are holes.

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(C) $1$. The resistance of intrinsic semiconductors decreases with an increase in temperature because more charge carriers are generated as thermal energy increases.$2$. Doping pure $Si$ (Group $14$) with trivalent impurities (Group $13$) creates a deficiency of electrons,resulting in $p$-type semiconductors.$3$. In $n$-type semiconductors,the majority charge carriers are electrons,not holes,because the pentavalent impurity (Group $15$) provides extra electrons.$4$. $A$ $p-n$ junction is the fundamental building block of many semiconductor devices like diodes and transistors.Therefore,the statement that the majority carriers in $n$-type semiconductors are holes is incorrect.

Which of the following statements is incorrect?

Similar Questions

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