Which one of the following statements is true? $A$ p-type semiconductor is doped with

  • A
    trivalent impurity and electrons are majority carriers.
  • B
    pentavalent impurity and electrons are minority carriers.
  • C
    pentavalent impurity and holes are minority carriers.
  • D
    trivalent impurity and holes are majority carriers.

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$A$ donor atom in a semiconductor has a loosely bound electron. The orbit of this electron is considerably affected by the semiconductor material but behaves in many ways like an electron orbiting a hydrogen nucleus. Given that the electron has an effective mass of $0.07 \, m_e$,where $m_e$ is the mass of the free electron,and the space in which it moves has a permittivity of $13 \, \varepsilon_0$,then the radius of the electron's lowermost energy orbit will be close to ................. $\mathring{A}$ (take the Bohr radius of the hydrogen atom as $0.53 \mathring{A}$).

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:

When the conductivity of a semiconductor is only due to the breaking of the covalent bonds,the semiconductor is called

Which statement is correct regarding the charge of doped semiconductors?

The semiconductors are generally

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