Which two important processes occur during the formation of a $p-n$ junction?

Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is:

In forward biasing of the $p-n$ junction:

The $n$-side of the depletion layer of a $p-n$ junction

For the circuit shown in the figure,the equivalent resistance between points $A$ and $B$ for two cases $(i)$ $V_A > V_B$ and (ii) $V_B > V_A$ is $\qquad \Omega$ and $\qquad \Omega$ respectively. ($D_1$ and $D_2$ are ideal diodes)

For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.