$A$ photodetector is fabricated from a semiconductor with a band gap $E_g = 0.73 \, eV$. What is the maximum wavelength (in $nm$) it can detect?

$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

$A$ photodiode is a device:

The $I-V$ characteristics of an $LED$ are correctly shown by which graph?

In a $p-n$ junction solar cell,the value of photo-electromotive force produced by monochromatic light is proportional to the

$A$ solar cell is to be fabricated for efficient conversion of solar radiation to emf using material $A$. The solar cell is to be mechanically protected with the help of a coating using material $B$. If the band gap energy of materials $A$ and $B$ are $E_{A}$ and $E_{B}$ respectively,then which of the following choices is optimum for better performance of the solar cell?