$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

The photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly

Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):

Explain the construction and working of a photodiode.

In a $PN$ junction photocell,the value of the photo-electromotive force produced by monochromatic light is proportional to

The $I-V$ characteristics for a junction diode are shown. The device is