Which of the following diodes is reverse biased?

In which figure,the junction diode is forward biased?

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

In the given circuit, the voltage across load resistance $(R_L)$ is: (in $V$)

In the given options,the diode that is forward biased is

$A$ semiconductor $(Ge - As)$ has an energy gap of $1.43\, eV.$ What is the maximum wavelength emitted when a hole and an electron recombine in such semiconductor in $\mathring{A}$?