$A$ semiconductor device is connected in a series circuit with a battery and a resistance. $A$ current is found to pass through the circuit. If the polarity of the battery is reversed,the current drops almost to zero. The device may be
- A$A$ $P-$type semiconductor
- BAn $N-$type semiconductor
- C$A$ $PN-$junction
- DAn intrinsic semiconductor
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$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?
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View SolutionWhat is a depletion barrier?
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View SolutionThe built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)
The current $i$ in the circuit will be:
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