In the case of a $p-n$ junction diode,the width of the depletion region is:

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

$A$ silicon diode has a forward voltage drop of $1.2\, V$ for a forward $DC$ current of $100\, mA$. It has a reverse current of $1\times10^{-6}\, A$ for a reverse voltage of $10\, V$. The bulk and reverse resistances of the diode are:

When a $P-N$ junction is forward biased,which of the following is true?

The electrical resistance of the depletion layer is large because

The cut-in voltage for a silicon diode is approximately $V$.