When a forward bias is applied to a p-n junct | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(B) In a $p-n$ junction,the potential barrier is created by the depletion region,which opposes the flow of majority charge carriers.When a forward bia

Vedclass · Accepted Answer

decreases

Vedclass · Answer

(B) In a $p-n$ junction,the potential barrier is created by the depletion region,which opposes the flow of majority charge carriers.When a forward bias is applied,the positive terminal of the battery is connected to the $p$-side and the negative terminal to the $n$-side.This external electric field opposes the internal electric field of the depletion region.As a result,the width of the depletion region decreases,which leads to a reduction in the potential barrier height.Therefore,the potential barrier decreases.

When a forward bias is applied to a $p-n$ junction,what happens to the potential barrier?

Similar Questions

What is the cause of the formation of the depletion layer in a $P-N$ junction?

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

The diode used in the circuit shown in the figure has a constant voltage drop of $0.5\; V$ at all currents and a maximum power rating of $100\; mW$. What should be the value of the resistor $R$,connected in series with the diode,to obtain the maximum current? (in $\Omega$)

For the given circuit,find $V_{AB} = ......V$.

Different voltages are applied across a $P-N$ junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

Vedclass Test Series

Exam Paper Generator

Online Exam Module