Which of the following statements is true for an $N$-type semiconductor?

In a semiconductor,the concentration of electrons is $8 \times 10^{14} \text{ cm}^{-3}$ and that of the holes is $5 \times 10^{12} \text{ cm}^{-3}$. The semiconductor is

Which of the following statements is not true?

In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.

The impurity atom added to germanium to make it $N-$type semiconductor is

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of