In a pure silicon $(n_i = 10^{16}/m^3)$ crystal at $300\, K$,$10^{21}$ atoms of phosphorus are added per cubic meter. The new hole concentration will be

  • A
    $10^{21}\, m^{-3}$
  • B
    $10^{19}\, m^{-3}$
  • C
    $10^{11}\, m^{-3}$
  • D
    $10^5\, m^{-3}$

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In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is

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Suppose a pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped with $1 \text{ ppm}$ concentration of pentavalent $As$. Calculate the number of electrons and holes. $(n_i = 1.5 \times 10^{16} \text{ m}^{-3})$

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In an $N$-type semiconductor,where are the donor energy levels $E_D$ located?

Consider an $n$-type semiconductor in which $n_e$ and $n_h$ are the number of electrons and holes,respectively.
$(A)$ Holes are minority carriers.
$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
$(E)$ The holes are not generated due to the donors.
Choose the correct answer from the options given below.

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